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MT48H8M32LFB5-75G

256Mb:16Megx16,8Megx32MobileSDRAM

GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

MT48H8M32LFB5-75ITG

256Mb:16Megx16,8Megx32MobileSDRAM

GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

MT48H8M32LFB5-75LG

256Mb:16Megx16,8Megx32MobileSDRAM

GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

MT48H8M32LFB5-75LITG

256Mb:16Megx16,8Megx32MobileSDRAM

GeneralDescription TheMicron?256MbMobileSDRAMisahigh-speedCMOS,dynamicrandom-accessmemorycontaining268,435,456-bits.Itisinternallyconfiguredasaquad-bankDRAMwithasynchronousinterface(allsignalsareregisteredonthepositiveedgeoftheclocksignal,CLK).Eachofthe

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

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