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NESG2031M05-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain Amplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05-T1-A

NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

California Eastern Labs

NESG2031M05-T1

NPNSiGeRFTransistorforLowNoise,High-GainAmplification

FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ?NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ?NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz ?Maximumstablepowergain:MSG=21.5dBTY

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2031M05-T1

NPNSiGeHIGHFREQUENCYTRANSISTOR

CEL

California Eastern Labs

NESG2031M05-T1

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    NESG2031M05-T1-A

  • 功能描述：

    射頻硅鍺晶體管 NPN SiGe High Freq

  • RoHS：

    否

  • 制造商：

    Infineon Technologies 發(fā)射極 - 基極電壓

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
SOT343
9700
絕對原裝正品現(xiàn)貨假一罰十
 詢價
NEC
24+
SOT-343SOT-323-4
9200
新進庫存/原裝
 詢價
NEC
2016+
SOT-343
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
原廠正品
23+
SOT343
5000
原裝正品,假一罰十
 詢價
NEC
1742+
SOT343
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
 詢價
NEC
6000
面議
19
SOT-343(SOT-
 詢價
RENESAS
24+
SOT343
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
CEL
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
RENESAS/瑞薩
24+
SOT-343
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單!
 詢價
RENESAS/瑞薩
23+
SOT343
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多NESG2031M05-T1-A供應(yīng)商 更新時間2025-5-20 16:31:00

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