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DAM15N100B

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM15N100D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM15N100S

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

IXFH15N100

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

IXYS

IXYS Corporation

IXFH15N100

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N100P

PolarPowerMOSFETHiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomo

IXYS

IXYS Corporation

IXFH15N100P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.76Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH15N100Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)lowQg ?Avalancheenergyandcurrentrated ?Fastintrinsicrectifier Advantages ?Ea

IXYS

IXYS Corporation

IXFK15N100Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NICC
22+
SMD
38000
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NICC
23+
SMD
27500
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更多NFI15N100TRF供應(yīng)商 更新時(shí)間2025-5-18 16:20:00

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