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首頁(yè) >NTBL045N065SC1>規(guī)格書(shū)列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
NTBL045N065SC1 | Marking:TBL045065SC1;Package:H-PSOF8L;Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
SiliconCarbide(SiC)MOSFET–EliteSiC,31mohm,650V,M2,D2PAK-7L Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–31mohm,650V,M2,D2PAK-7L Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(o | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L650V,31m,62A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-32mohm,650V,M2,TO-247-3L Features ?Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100AvalancheTested ?TJ | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,Power88 Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET-33mohm,650V,M2,Power88 Features ?Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=162pF) ?100AvalancheTested ?TJ=175?C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbideSiCMOSFET-31mohm,650V,M2,D2PAK-71 Features ?Typ.RDS(on)=31m@VGS=18V Typ.RDS(on)=45m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?LowEffectiveOutputCapacitance(Coss=168pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexem | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–32mohm,650V,M2,TO-247-3L Features ?Typ.RDS(on)=32m@VGS=18V Typ.RDS(on)=42m@VGS=15V ?UltraLowGateCharge(QG(tot)=105nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=162pF) ?100%AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSComplia | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
H-PSOF8L 9.90x11.68, 1.20P |
100000 |
全新原裝 |
詢價(jià) | ||
ONSEMI |
22 |
SOT-23 |
690 |
全新、原裝 |
詢價(jià) | ||
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu) |
詢價(jià) | |||
onsemi |
23+ |
PSOF-8L |
1356 |
原廠正品現(xiàn)貨SiC MOSFET全系列 |
詢價(jià) | ||
24+ |
N/A |
54000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
ONN |
2324+ |
3645 |
原裝正品,超低價(jià)出售 |
詢價(jià) | |||
Onsemi |
23+ |
NA |
140 |
公司原裝 |
詢價(jià) | ||
onsemi |
2025+ |
55740 |
詢價(jià) | ||||
onsemi(安森美) |
24+ |
HPSOF8L |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價(jià) |
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