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NTH4L080N120SC1

SiC N-Channel MOSFET

FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NTH4L080N120SC1_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L080N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L095N065SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 70 m, 31 A

Features ?Typ.RDS(on)=70m@VGS=18V Typ.RDS(on)=95m@VGS=15V ?UltraLowGateCharge(QG(tot)=50nC) ?LowOutputCapacitance(Coss=89pF) ?100%AvalancheTested ?TJ=175°C ?ThisDeviceisPb?FreeandisRoHSCompliant TypicalApplications ?SMPS(SwitchingM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features ?Typ.RDS(on)=160m ?UltraLowGateCharge(QG(tot)=34nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4LN061N60S5H

Marking：NTH4LN061N60S5H；Package：TO247-4L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247-4L 600 V, 61 m, 41 A

Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features ?650V@TJ=150?C/Typ.RDS(on)=48.8m ?100AvalancheTested ?Pb?Free,HalogenFree/BFRFreeandRoHSCompliant Applic

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL015N065SC1

Marking：HL015N065SC1；Package：TO-247；Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features ?Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V ?UltraLowGateCharge(QG(tot)=283nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=430pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsec

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NTH

  • 功能描述：

    烙鐵 Weller Chisel Tip For WMP Solder Penc

  • RoHS：

    否

  • 制造商：

    Weller

  • 產(chǎn)品：

    Soldering Stations

  • 類型：

    Digital, Iron, Stand, Cleaner

  • 瓦特：

    50 W

  • 最大溫度：

    + 850 F

  • 電纜類型：

    US Cord Included

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