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NTTFS080N10G

Marking：80NG；Package：u8FL；MOSFET - Power, Single N-Channel, 8FL 100 V, 72 m, 16 A

Features ?WideSOAforLinearModeOperation ?LowRDS(on)toMinimizeConductionLosses ?HighPeakUISCurrentCapabilityforRuggedness ?SmallFootprint(3.3x3.3mm)forCompactDesign ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

G080N10M

N-ChannelEnhancementModePowerMOSFET

Description TheG080N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G080N10T

N-ChannelEnhancementModePowerMOSFET

Description TheG080N10Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT080N10K

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT080N10KA

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT080N10M

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10Musesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT080N10T

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GT080N10TA

N-ChannelEnhancementModePowerMOSFET

Description TheGT080N10TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

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NK/南科功率
2025+
DFN3333-8
986966
國產(chǎn)
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ONSEMI/安森美
23+
WDFN-8
3000
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onsemi
2025+
8-WDFN(3.3x3.3)
55740
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ONSEMI/安森美
24+
WDFN-8
60000
全新原裝現(xiàn)貨
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ON
24+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
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ON/安森美
23+
NA
40000
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ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
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onsemi(安森美)
24+
DFN8(3.3x3.3)
7350
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8735
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24+
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62000
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更多NTTFS080N10G供應(yīng)商 更新時(shí)間2025-5-25 14:01:00

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