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PBRN123E

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123E_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123EK

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123EK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ES

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ES

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2k??R2=2.2k?

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBRN123ET

NPN800mA,40VBISSRETs;R1=2.2kW,R2=2.2kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
NUVOTON/新唐
24+
65200
詢價
NUVOTON/新唐
20+
SMD
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
NUVOTON/新唐
2406+
1850
誠信經(jīng)營!進口原裝!量大價優(yōu)!
 詢價
NUVOTON
1
詢價
BIFU/QUANYING
兩年內(nèi)
NA
215
實單價格可談
 詢價
Korg Nutube
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
AMIS
05/06+
DIP28
1232
全新原裝100真實現(xiàn)貨供應(yīng)
 詢價
AMIS
24+
DIP-28
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
AMIS
23+
DIP28
9280
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
AMIS
6000
面議
19
DIP28
 詢價
更多NUTINY-SDK-NUC123供應(yīng)商 更新時間2025-5-23 14:47:00

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