首頁 >PHABCP69-16>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
20V,2APNPmediumpowertransistors Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
20V,2APNPmediumpowertransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
20V,2APNPmediumpowertransistors Featuresandbenefits *Highcollectorcurrentcapability ICandICM *Threecurrentgainselections *ReducedPrinted-CircuitBoard(PCB) arearequirements *LeadlessverysmallSMDplastic packagewithmediumpowercapability *Exposedheatsinkforexcellentthermal andelectricalcond | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
PNPmediumpowertransistor DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.20V). APPLICATIONS ?Generalpurposeswitchingandamplification ?Powerapplicationssuchasaudiooutputstages. | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
20V,2APNPmediumpowertransistors Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
PNPSiliconAFTransistor PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
PNPPlastic-EncapsulateTransistors | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
PNPSiliconAFTransistor(ForgeneralAFapplicationHighcollectorcurrentHighcurrentgain) PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
20V,2APNPmediumpowertransistors 1.Generaldescription PNPmediumpowertransistorsinaSOT223(SC-73)Surface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinau | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
PNPSiliconAFTransistors ?ForgeneralAFapplications ?Highcollectorcurrent ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Complementarytype:BCX68(NPN) ?Pb-free(RoHScompliant)package1) ?QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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