首頁 >PWCT1004AFVMHPNR>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Thermometricstemperaturesensorsolutions | AMPHENOLAmphenol Corporation 安費(fèi)諾集團(tuán)美國安費(fèi)諾集團(tuán) | AMPHENOL | ||
GLASSPASSIVATEDSILICONRECTIFIER | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比電子南通康比電子有限公司 | HORNBY | ||
Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier Features ?IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. ?Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPNSiliconGermaniumTransistorHighFrequencyLowNoiseAmplifier Features ?IdealforLNAapplications.e.g.Tuner,WirelessLAN,Cordlessphoneandetc. ?Highgainandlownoise. MSG=25dBtyp.,NF=0.65dBtyp.atVCE=2V,IC=5mA,f=0.9GHz MSG=22dBtyp.,NF=0.75dBtyp.atVCE=2V,IC=5mA,f=1.8GHz MSG=21dBtyp.,N | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|
