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RD3P05BAT

Marking：RD3P05BAT；Package：TO-252；Pch -100V -50A Power MOSFET

Features 1)Lowon-resistance 2)Highpowersmallmoldpackage 3)Pb-freeplating;RoHScompliant 4)100RgandUIStested 5)Halogenfree Application Switching

ROHMRohm

羅姆羅姆半導體集團

RD3P06BBKHRB

Marking：RD3P06BBK；Package：TO-252；Nch 100V 59A Power MOSFET

Features Lowon-resistance Pd-freeplating;RoHScompliant 100%Avalanchetested AEC-Q101qualified Application ADAS/Info./Lighting/Body

ROHMRohm

羅姆羅姆半導體集團

RD3P07BBH

Marking：RD3P07BBH；Package：TO-252；Nch 100V 80A Power MOSFET

Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)Halogenfree Application Switching

ROHMRohm

羅姆羅姆半導體集團

RD3R02BBH

Marking：RD3R02BBH；Package：TO-252；Nch 150V 20A Power MOSFET

Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)HalogenFree Application Switching

ROHMRohm

羅姆羅姆半導體集團

RD3R05BBH

Marking：RD3R05BBH；Package：TO-252；Nch 150V 50A Power MOSFET

Features 1)Lowon-resistance 2)HighPowerPackage(TO-252) 3)Pb-freeplating;RoHScompliant 4)HalogenFree Application Switching

ROHMRohm

羅姆羅姆半導體集團

RS1DFA

Marking：RDL；Package：SOD-123FA；Surface Mount Fast Recovery Rectifiers 0.8 A, 50 V - 1000 V

Features ?GlassPassivatedChipJunction ?FastSwitchingforHighEfficiency ?HighSurgeCapacity ?LowForwardVoltage:1.3VMaximum ?ULFlammability94V?0Classification ?MSL1perJ?STD?020 ?RoHSCompliant/GreenMoldingCompound ?IndustrialDeviceQualifiedperAEC?Q101Standa

ONSEMION Semiconductor

安森美半導體安森美半導體公司

SMDJ5.0

Marking：RDD；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove9V 3000WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

SMDJ5.0A

Marking：RDE；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove9V 3000WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

SMDJ5.0A

Marking：RDE；Package：SMC；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 3000WPeakPulsePowerDissipation Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticCaseMaterialhasULFlammabilityClassification Rating94V-O ThisisaPb?FreeDevice AllSMCPartsareTraceabletot

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

SMDJ5.0A

Marking：RDE；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Built-instrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 3000Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01% Fast

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

詳細參數(shù)

  • 型號：

    RD

  • 制造商：

    BlockMaster Electronics

  • 功能描述：

    Roll

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HellermannTyton
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Altech Corp.
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ST/意法
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更多RD供應商 更新時間2025-5-22 17:07:00

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