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SIHFD224

PowerMOSFET

VDS(V)250 RDS(on)(Ω)VGS=10V1.1 Qg(Max.)(nC)14 Qgs(nC)2.7 Qgd(nC)7.8 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR224

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR224

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHFR224

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR224T

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR224TA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR224TA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR224TL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    SCRN224R-F

  • 制造商：

    Cornell Dubilier Electronics (CDE)

  • 類別：

    電容器 > 薄膜電容器

  • 系列：

    SCR

  • 包裝：

    散裝

  • 容差：

    ±10%

  • 額定電壓 - AC：

    600Vpk

  • 介電材料：

    紙，金屬化

  • 工作溫度：

    -40°C ~ 80°C

  • 安裝類型：

    機(jī)架安裝，需要支架/托架

  • 封裝/外殼：

    徑向，Can

  • 大小 / 尺寸：

    2.910" 長(zhǎng) x 1.910" 寬（73.91mm x 48.51mm），唇狀

  • 高度 - 安裝（最大值）：

    4.310"（109.47mm）

  • 端接：

    螺紋，公頭

  • 引線間距：

    1.380"（35.05mm）

  • 應(yīng)用：

    換向，高頻，開(kāi)關(guān)式，高脈沖，DV/DT

  • 描述：

    CAP FILM 10UF 10% 600VPK RADIAL

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Cornell-Dubilier
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更多SCRN224R-F供應(yīng)商 更新時(shí)間2021-9-14 10:50:00

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