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SIE830DF

N-Channel30-V(D-S)MOSFET

FEATURES ?ExtremelyLowQgdWFET?Technologyfor ??LowSwitchingLosses ?UltraLowThermalResistanceUsing ??Top-ExposedPolarPAK?Packagefor ??Double-SidedCooling ?Leadframe-BasedNewEncapsulatedPackage ??-DieNotExposed ??-SameLayoutRegardlessofDieSize ?LowQgd/Qgs

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF830A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SiHF830A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF830A

LowGateChargeQgResultsinSimpleDriveRequirement

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSu

KERSEMI

Kersemi Electronic Co., Ltd.

SIHF830AL

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF830AL

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF830AS

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF830AS

N-Channel650V(D-S)PowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SIHF830AS

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    SD830T

  • 制造商：

    PANJIT

  • 制造商全稱：

    Pan Jit International Inc.

  • 功能描述：

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/DIODES/PANJIT
24+
TO-251AB
43000
詢價(jià)
SILAN/士蘭微
21+
TO-251AB
38000
詢價(jià)
PANJIT
22+
TO-251
6000
十年配單,只做原裝
 詢價(jià)
SILAN/士蘭微
22+
TO-251AB
8900
英瑞芯只做原裝正品!!!
 詢價(jià)
SILAN/士蘭微
2052+
TO-251AB
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
SILAN/士蘭微
22+
TO-251AB
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
SILAN/士蘭微
21+
TO-251AB
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
PANJIT
22+
TO-251
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
PANJIT
25+
TO-251
37650
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
SILAN/士蘭微
21+
TO-251AB
38000
SILAN一級(jí)代理商市場(chǎng)最低價(jià)
 詢價(jià)
更多SD830T供應(yīng)商 更新時(shí)間2025-5-23 15:30:00

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