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STD30NE06

N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkablema

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD30NE06L

N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD30NE06L

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD30NE06LT4

N - CHANNEL 60V - 0.025 ohm - 30A TO-252

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD30NE06LT4

N-Channel 60-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STD30NE06LT4CMD30N06

N-Channel 60-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STD30NE06LT4-CMD30N06

N-Channel 60-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STD30NE06T4

N-Channel 60-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP30NE06

N-CHANNEL60V-0.042ohm-30A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP30NE06FP

N-CHANNEL60V-0.042ohm-30A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STD30NE06

  • 功能描述：

    MOSFET N-CH 60V 30A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
24+
N/A
2420
詢(xún)價(jià)
ST
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢(xún)價(jià)
ST
23+
TO-252
8795
詢(xún)價(jià)
ST
06+
TO-252
8000
原裝庫(kù)存
 詢(xún)價(jià)
ST
24+
TO-252
2987
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電!
 詢(xún)價(jià)
ST
1822+
TO-252
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
 詢(xún)價(jià)
ST
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢(xún)價(jià)
IR
23+
TO-220FU
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
ST
08+
5000
普通
 詢(xún)價(jià)
ST/意法
2022+
TO-252
20000
原廠(chǎng)代理 終端免費(fèi)提供樣品
 詢(xún)價(jià)
更多STD30NE06供應(yīng)商 更新時(shí)間2025-5-8 14:00:00

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