STL220NS6F7

Marking：220NS6F7；Package：PowerFLAT；N-channel 60 V, 1.4 mΩ typ., 250 A STripFET? F7 Power MOSFET plus monolithic Schottky in a PowerFLAT? 5x6

Features ?AmongthelowestRDS(on)onthemarket ?Excellentfigureofmerit(FoM) ?EmbeddedSchottkydiode ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFET?F7technol

STL225N6F7AG

Automotive-grade N-channel 60 V, 1.2 m typ., 120 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 package

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced

STL22N60DM6

N-channel 600 V, 220 m typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STL22N60M6

N-channel 600 V, 220 m typ., 10 A, MDmeshTM M6 Power MOSFET in a PowerFLAT? 5x6 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL22N65M5

Low gate input resistance

Description ThisdeviceisanN-channelPowerMOSFETbasedontheMDmeshM5innovativeverticalprocesstechnologycombinedwiththewell-knownPowerMESHhorizontallayout.Theresultingproductoffersextremelylowon-resistance,makingitparticularlysuitableforapplicationsrequiringhighpo

STL22NF10

N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT??LOW GATE CHARGE STripFET??II MOSFET

DESCRIPTION ThisapplicationspecificPowerMOSFETisthesecondgenerationofSTMicroelectronisuniqueSTripFET?technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT?packageallowsasignificantreductioninboardspacewithoutcompro

STL24N60M2

Marking：24N60M2；Package：PowerFLAT；N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh?M2technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedeviceexhibitslowon-resistanceandoptimizedswitchingcharacteristics,renderingitsuitableforthemostdemandinghighefficiencyco

STL24N60M6

N-channel 600 V, 0.175 typ., 15 A, MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL24N65M2

N-channel 650 V, 0.205 typ., 14 A MDmesh M2 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh?M2technology. Thankstoitsstriplayoutandimprovedvertical structure,thedevices

STL2545N

TRENCH SCHOTTKY BARRIER DIODE

APPLICATIONS ?Lowvoltage,high frequencyrectifier ?Freewheelingcircuitand protectioncircuitoflowvoltage ?solarcelljunctionboxasa bypassdiode FEATURES ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Highreliability ?RoHSproduct