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零件編號	下載訂購	功能描述/絲印	制造商上傳企業(yè)	LOGO
SUN10A60F	文件：476.83 Kbytes Page：8 Pages	New Generation N-Ch Power MOSFET	KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團	KODENSHI
SUN10A60FD	文件：476.39 Kbytes Page：8 Pages	New Generation N-Ch Power MOSFET	KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團	KODENSHI
T10A60L	文件：155.43 Kbytes Page：4 Pages	10AmpSiliconRectifiers Features ?Lowforwardvoltagedrop ?Highcurrentcapability ?Highforwardsurgecurrentcapability ?Highreliability ?Hightemperaturesolderingguaranteed:260°C/10seconds /.375(9.5mm)leadlength,5lbs(2.3kg)tension ?RoHScompliant	TAITRON TAITRON Components Incorporated	TAITRON
TCU10A60	文件：52.09 Kbytes Page：5 Pages	FRD-ForPowerFactorImprovementHighFrequencyRectification FEATURES DualDiodes–CathodeCommon Ultra–FastRecovery LowForwardVoltageDrop HighSurgeCapability	NIEC Nihon Inter Electronics Corporation	NIEC
TK10A60D	文件：164.35 Kbytes Page：6 Pages	SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.58?(typ.) ?Highforwardtransferadmittance:\|Yfs\|=6.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
TK10A60D	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA
TK10A60D	文件：319.2 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
TK10A60D	文件：319.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
TK10A60W	文件：1.07069 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
TK10A60W	文件：246.69 Kbytes Page：10 Pages	MOSFETsSiliconN-ChannelMOS(DTMOS?? Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327?(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications ?SwitchingVoltageRegulators	TOSHIBAToshiba Semiconductor 東芝株式會社東芝	TOSHIBA

零件編號

下載訂購

功能描述/絲印

制造商上傳企業(yè)

LOGO

SUN10A60F

文件：476.83 Kbytes

Page：8 Pages

New Generation N-Ch Power MOSFET

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

KODENSHI

SUN10A60FD

文件：476.39 Kbytes

Page：8 Pages

New Generation N-Ch Power MOSFET

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團

KODENSHI

T10A60L

文件：155.43 Kbytes

Page：4 Pages

10AmpSiliconRectifiers

Features ?Lowforwardvoltagedrop ?Highcurrentcapability ?Highforwardsurgecurrentcapability ?Highreliability ?Hightemperaturesolderingguaranteed:260°C/10seconds /.375(9.5mm)leadlength,5lbs(2.3kg)tension ?RoHScompliant

TAITRON

TAITRON Components Incorporated

TAITRON

TCU10A60

文件：52.09 Kbytes

Page：5 Pages

FRD-ForPowerFactorImprovementHighFrequencyRectification

FEATURES *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability

NIEC

Nihon Inter Electronics Corporation

NIEC

TK10A60D

文件：164.35 Kbytes

Page：6 Pages

SwitchingRegulatorApplications

?Lowdrain-sourceON-resistance:RDS(ON)=0.58?(typ.) ?Highforwardtransferadmittance:|Yfs|=6.0S(typ.) ?Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TOSHIBA

TK10A60D

文件：1.58274 Mbytes

Page：73 Pages

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TOSHIBA

TK10A60D

文件：319.2 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

TK10A60D

文件：319.21 Kbytes

Page：2 Pages

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=550V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.72Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

TK10A60W

文件：1.07069 Mbytes

Page：9 Pages

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBSEMI

TK10A60W

文件：246.69 Kbytes

Page：10 Pages

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327?(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications ?SwitchingVoltageRegulators

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TOSHIBA

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市河鋒鑫科技有限公司	SUN10A60F	AUK	2022+	TO-220F	7500	原廠代理終端免費提供樣品	詢價
深圳市躍創(chuàng)芯科技有限公司	SUN10A60F	AUK	2022+	TO-220F	30000	進口原裝現(xiàn)貨供應(yīng),絕對原裝假一罰十	詢價
深圳市創(chuàng)新跡電子有限公司	SUN10A60F	AUK	2022+	TO-220F	30000	進口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價
深圳市安富世紀(jì)電子有限公司	SUN10A60F	AUK	20+	TO-220F	7500	現(xiàn)貨很近!原廠很遠!只做原裝	詢價
深圳市一線半導(dǎo)體有限公司	SUN110N06-04L	VISHAY	24+	TO-252	36800		詢價
深圳市澳億芯電子科技有限公司	SUN110N06-04L	VISHAY	08+		5000	普通	詢價
深圳市科恒偉業(yè)電子有限公司	SUN110N06-04L	VISHAY/威世	21+		9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	SUN110N06-04L	-	23+	NA	11200	原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO	詢價
瀚佳科技(深圳)有限公司	SUN110N06-04L	VISHAY	24+		35200	一級代理/放心采購	詢價
北京京北通宇電子元件有限公司	SUN-12075-12VPA7.6	S&S	24+	con	10000	查現(xiàn)貨到京北通宇商城	詢價

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