首頁 >TIC106Y>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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PLASTICPOWERTRANSISTORS PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications | TEL TRANSYS Electronics Limited | TEL | ||
SiliconPNPDarlingtonPowerTransistors DESCRIPTION ?WithTO-220Cpackage ?DARLINGTON ?HighDCcurrentgain ?Lowcollectorsaturationvoltage ?ComplementtotypeTIP100/101/102 APPLICATIONS ?Forindustrialuse | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION ?HighDCCurrentGain-:hFE=1000(Min)@IC=-3A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) ?LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-3A = | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP100/101/102 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
PNPPlasticMedium-PowerSiliconTransistors Features ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc ?LowCollector-EmitterSaturationVoltage ?MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors ?TO-220Compac | MCCMicro Commercial Components 美微科美微科半導體股份有限公司 | MCC | ||
SiliconPNPDarlingtonPowerTransistors | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TO-220-PowerTransistorsandDarlingtons | RECTRON Rectron Semiconductor | RECTRON | ||
PlasticMedium??owerComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
DarlingtonPowerTransistors(PNP) DarlingtonPowerTransistors(PNP) Features ?Designedforgeneral-purposeamplifierandlowspeedswitchingapplications ?RoHSCompliant | TAITRON TAITRON Components Incorporated | TAITRON | ||
PlasticMedium-PowerComplementarySiliconTransistors | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI |
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