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FDD6670AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670AS

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6670AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670S

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDD6670SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670SincludesanintegratedSchottkydiodeu

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6670S

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=64A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=59mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD6670S

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDP6670AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP6670AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP6670AS

30VN-ChannelPowerTrench?SyncFET?

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    TMDXEVM6670L

  • 制造商：

    Texas Instruments

  • 類(lèi)別：

    開(kāi)發(fā)板，套件，編程器 > 評(píng)估板 - 嵌入式 - MCU，DSP

  • 系列：

    KeyStone

  • 包裝：

    盒

  • 板類(lèi)型：

    評(píng)估平臺(tái)

  • 類(lèi)型：

    DSP

  • 核心處理器：

    C66x

  • 使用的 IC/零件：

    TMS320C6670

  • 安裝類(lèi)型：

    固定

  • 內(nèi)含物：

    板

  • 描述：

    TMS320C6670 EVAL BRD

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TI
23+
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10021
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TI
2018+
26976
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TI/德州儀器
24+
BGAQFP
15050
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22+
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5
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TI
23+24
ARM
7665
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TI
24+
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6000
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TEXAS INSTRUMENTS
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TEXAS INSTRUMENTS
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更多TMDXEVM6670L供應(yīng)商 更新時(shí)間2025-5-24 9:11:00

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