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TP0610T中文資料SUTEX數(shù)據(jù)手冊(cè)PDF規(guī)格書

TP0610T
廠商型號(hào)

TP0610T

功能描述

P-Channel Enhancement-Mode Vertical DMOS FETs

絲印標(biāo)識(shí)

T50*

封裝外殼

SOT-23

文件大小

453.95 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Supertex, Inc
企業(yè)簡(jiǎn)稱

SUTEX

中文名稱

Supertex, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-20 23:00:00

人工找貨

TP0610T價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

TP0610T規(guī)格書詳情

General Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Features

? High input impedance and high gain

? Low power drive requirement

? Ease of paralleling

? Low CISS and fast switching speeds

? Excellent thermal stability

? Integral source-drain diode

? Free from secondary breakdown

Applications

? Logic level interfaces - ideal for TTL and CMOS

? Solid state relays

? Battery operated systems

? Photo voltaic systems

? Analog switches

? Power management

? Telecom switches

產(chǎn)品屬性

  • 型號(hào):

    TP0610T

  • 功能描述:

    MOSFET 60V 0.12A 0.36W

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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