首頁 >UPD3301>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CC330xSimpleLink?Wi-Fi?6andBluetooth?LowEnergyTransceiver 1Features ?HighlyoptimizedWi-Fi?6andBluetooth? LowEnergy5.2systemforlow-costindustrial embeddedapplications ?DesignedtointegratewithanyMPUorMCUhost capableofrunningaTCP/IPstack ?Wi-Fi6 –MAC,baseband,andRFtransceiverwith supportforIEEE802.11b/g/n/ax | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
CC330xMODSimpleLink?Wi-Fi6andBluetooth?LowEnergyCompanionModule 1Features KeyFeatures ?Wi-Fi6(802.11ax) ?Bluetooth?LowEnergy5.4inCC33x1MOD ?CompanionmoduletoanyprocessororMCUhost capableofrunningaTCP/IPstack ?Integrated2.4GHzPAforcompletewireless systemwithupto+18dBmoutputpower ?Operatingtemperature:–40°Cto+85°C | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
CC330xMODSimpleLink?Wi-Fi6andBluetooth?LowEnergyCompanionModule 1Features KeyFeatures ?Wi-Fi6(802.11ax) ?Bluetooth?LowEnergy5.4inCC33x1MOD ?CompanionmoduletoanyprocessororMCUhost capableofrunningaTCP/IPstack ?Integrated2.4GHzPAforcompletewireless systemwithupto+18dBmoutputpower ?Operatingtemperature:–40°Cto+85°C | TITexas Instruments 德州儀器美國德州儀器公司 | TI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-7.0A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-7.0A,RDS(ON)=32mW@VGS=-10V. RDS(ON)=50mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET |
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