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STW3N170

Marking：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH? Power MOSFETs in TO-247 and TO-247 long leads packages

Features ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?100avalanchetested Applications ?Switchingapplications Description ThisPowerMOSFETisdesignedusingthe STMicroelectronicsconsolidatedstrip-layoutbased MESHOVERLAY?process.Theresultis aproduct

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STW3N170

Marking：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH? Power MOSFETs in TO-247 and TO-247 long leads packages

Features ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?100avalanchetested Applications ?Switchingapplications Description ThisPowerMOSFETisdesignedusingthe STMicroelectronicsconsolidatedstrip-layoutbased MESHOVERLAY?process.Theresultis aproduct

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STWA3N170

Marking：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH? Power MOSFETs in TO-247 and TO-247 long leads packages

Features ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?100avalanchetested Applications ?Switchingapplications Description ThisPowerMOSFETisdesignedusingthe STMicroelectronicsconsolidatedstrip-layoutbased MESHOVERLAY?process.Theresultis aproduct

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STWA3N170

Marking：3N170；Package：TO-247；N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH? Power MOSFETs in TO-247 and TO-247 long leads packages

Features ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?100avalanchetested Applications ?Switchingapplications Description ThisPowerMOSFETisdesignedusingthe STMicroelectronicsconsolidatedstrip-layoutbased MESHOVERLAY?process.Theresultis aproduct

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

AP3N1R0MT

Marking：3N1R0；Package：PMPAK5x6；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP3N1R7CYT

Marking：3N1R7C；Package：PDFN3.3x3.3；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP3N1R7MT

Marking：3N1R7；Package：PMPAK5x6；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP3N1R8MT

Marking：3N1R8；Package：PMPAK5x6；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP3N1R8MT-L

Marking：3N1R8；Package：PMPAK5x6L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP3N1R8P

Marking：3N1R8；Package：TO-220；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

詳細參數(shù)

  • 型號：

    3N1

  • 制造商：

    NJSEMI

  • 制造商全稱：

    New Jersey Semi-Conductor Products, Inc.

  • 功能描述：

    NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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5000
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342
新
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更多3N1供應商 更新時間2025-5-29 16:14:00

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