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TCR2EE31

Marking：3N1；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TCR2EF31

Marking：3N1；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TCR5BM31A

Marking：3N1；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1.Description TheTCR5BMseriesareCMOSsingle-outputvoltageregulatorswithanon/offcontrolinput,featuringultralowdropoutvoltage,highPSRR,lowinrushcurrentandfastloadtransientresponse. Adifferentiatingfeatureistheuseofasecondarybiasrailasareferencevoltagethat

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

IPB70N10S3-12

Marking：3N1012；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD35N10S3L-26

Marking：3N10L26；Package：PG-TO252-3-11；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI70N10S3-12

Marking：3N1012；Package：PG-TO262-3-1；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP70N10S3-12

Marking：3N1012；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPTC030N12NM3

Marking：3N12030；Package：PG-HDSOP-16；MOSFET OptiMOSTM3 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?100avalanchetested ?Optimizedformotordrivesandbatterypoweredapplications. ?Optimizedfortopsidecooling. ?Idealforbatterymanagementswitchapplication ?Su

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

STFW3N150

Marking：3N150；Package：TO-3PF；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW3N150

Marking：3N150；Package：TO-247；N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features ?100avalanchetested ?IntrinsiccapacitancesandQgminimized ?Highspeedswitching ?FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications ?Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    3N1

  • 制造商：

    NJSEMI

  • 制造商全稱：

    New Jersey Semi-Conductor Products, Inc.

  • 功能描述：

    NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS

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更多3N1供應(yīng)商 更新時(shí)間2025-5-28 9:31:00

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