10BJ17A

Marking：A17；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ17A

Marking：A17；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

74AHC1G17GV

Marking：a17；Package：SC-74A；Single Schmitt trigger buffer

Generaldescription The74AHC1G17and74AHCT1G17aresinglebufferswithSchmitt-triggerinputs.Inputsareovervoltagetolerant.Thisfeatureallowstheuseofthesedevicesastranslatorsinmixedvoltageenvironments. TheAHCdevicehasCMOSinputswitchinglevelsandsupplyvoltagerange2V

1.0SMBJ17A

Marking：A17；1000 WATT TVS COMPONENT

LPB8917DT0AG

Marking：A17；Package：DFN3333-8A；P-Channel 150-V (D-S) MOSFET Low RDS(on) trench technology

10BJ170A

Marking：A170；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, r epetitionrate(dutycycle):0.01

10SMBJ170A

Marking：A170；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1000Wpeakpulsepowercapabilitywitha10/1000μswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. RoHScompliant

2SA1727

Marking：A1727；Package：SOT-428；High-voltage Switching Transistor (-400V, -0.5A)

High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati

2SA1776

Marking：A1776；Package：ATV；High-voltage Switching Transistor (-400V, -0.5A)

High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati

ADS117L11IRUKR

Marking：A17L11；Package：WQFN；ADS117L11 400-kSPS, Wide-Bandwidth, 16-Bit, Delta-Sigma ADC

1Features ?Programmabledatarate: –Upto400kSPS(widebandfilter) –Upto1.067MSPS(low-latencyfilter) ?Selectabledigitalfilter: –Widebandorlow-latency ?ACaccuracywithdcprecision: –Dynamicrange:97.2dB(200kSPS) –THD:–110dB –INL:5ppmofFS –Offsetdrift:50