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CEU16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU16N10L

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU16N10SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

ST16N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

ST16N10

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

ST16N10

TO-252Packagedesign

STANSON

Stanson Technology

ST16N10-TP

N-Channel100-V(D-S)MOSFET

Features ?Ros10m0@VGS=10vV ?SuperhighdensitycelldesignforextremelylowRos)| ?Exceptionalon-resistanceandmaximumDCcurrent

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

STP16N10L

N-CHANNEL100V-0.14ohm-16A-TO-220POWERMOSTRANSISTOR

N-CHANNEL100V-0.14?-16A-TO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=0.14? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    CED16N10L

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
VBsemi
23+
TO-251
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
CET/華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-252
24076
原廠代理 終端免費(fèi)提供樣品
 詢價
CET
21+
TO-251
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
CET/華瑞
24+
NA/
27326
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
CET/華瑞
2022+
TO-251
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
CET/華瑞
20+
TO-252
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價
INFINEON/英飛凌
24+
TO-251
56000
公司進(jìn)口原裝現(xiàn)貨 批量特價支持
 詢價
CET
24+
TO-251
18000
原裝正品 有掛有貨 假一賠十
 詢價
VBsemi/臺灣微碧
20+
TO-251
2051
進(jìn)口原裝現(xiàn)貨,假一賠十
 詢價
更多CED16N10L供應(yīng)商 更新時間2025-5-23 14:48:00

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