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零件編號(hào)	下載訂購(gòu)	功能描述/絲印	制造商上傳企業(yè)	LOGO
ST16N10-TP	文件：2.67918 Mbytes Page：5 Pages	Marking：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET Features ?Ros10m0@VGS=10vV ?SuperhighdensitycelldesignforextremelylowRos)\| ?Exceptionalon-resistanceandmaximumDCcurrent	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
CEB16N10	文件：539.92 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB16N10	文件：615.27 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB16N10L	文件：634.8 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB16N10L	文件：651.25 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEC16N10L	文件：807.31 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED16N10	文件：628.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED16N10	文件：353.55 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED16N10L	文件：491.95 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED16N10L	文件：1.33831 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER

零件編號(hào)

下載訂購(gòu)

功能描述/絲印

制造商上傳企業(yè)

LOGO

ST16N10-TP

文件：2.67918 Mbytes

Page：5 Pages

Marking：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ?Ros10m0@VGS=10vV ?SuperhighdensitycelldesignforextremelylowRos)| ?Exceptionalon-resistanceandmaximumDCcurrent

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

TECHPUBLIC

CEB16N10

文件：539.92 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEB16N10

文件：615.27 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEB16N10L

文件：634.8 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CEB16N10L

文件：651.25 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CEC16N10L

文件：807.31 Kbytes

Page：5 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CED16N10

文件：628.86 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET

CED16N10

文件：353.55 Kbytes

Page：4 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CED16N10L

文件：491.95 Kbytes

Page：5 Pages

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

CED16N10L

文件：1.33831 Mbytes

Page：5 Pages

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

DOINGTER

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳中芯器材有限公司	ST16N10-TP	TECH PUBLIC(臺(tái)舟)	23+	TO-252-3L	2480	三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET)	詢(xún)價(jià)
深圳市威爾健半導(dǎo)體有限公司	ST16N10低壓MOS管	VBSEMI/臺(tái)灣微碧	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢(xún)價(jià)
深圳市博中泰實(shí)業(yè)有限公司	ST16N10低壓MOS管	VBSEMI/臺(tái)灣微碧	24+	TO-252	60000	全新原裝現(xiàn)貨	詢(xún)價(jià)
深圳市賽特興科技有限公司	ST16P10	ST	23+	SOT-251	16900	正規(guī)渠道,只有原裝!	詢(xún)價(jià)
深圳市中福國(guó)際管理有限公司	ST16P10	ST	24+	SOT-251	200000	原裝進(jìn)口正口,支持樣品	詢(xún)價(jià)
深圳市利芯偉業(yè)科技有限公司	ST16P10	ST	22+	SOT-251	16900	支持樣品,原裝現(xiàn)貨,提供技術(shù)支持!	詢(xún)價(jià)
深圳市騰億芯科技有限公司	ST16P10	ST	25+	SOT-251	16900	原裝，請(qǐng)咨詢(xún)	詢(xún)價(jià)
深圳市賽美科科技有限公司	ST16-PE	PHOENIXCONTACT			65026	一級(jí)代理原裝正品價(jià)格優(yōu)勢(shì) 只做原裝!	詢(xún)價(jià)
天津市博通航睿技術(shù)有限公司	ST16-PE	Phoenix/菲尼克斯	23/24+	3036165	10052	優(yōu)勢(shì)特價(jià) 原裝正品全產(chǎn)品線技術(shù)支持	詢(xún)價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	ST16S014VCAR1500	JAE	23+	reel	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢(xún)價(jià)

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