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IXFQ50N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=180mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFQ50N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFT50N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXGH50N60A

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60AS

HiPerFASTIGBT-SurfaceMountable

SurfaceMountable Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD HighfrequencyIGBT Highcurrenthandlingcapability 2ndgenerationHDMOS?process MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

IXGH50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGJ50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGK50N60B

HiPerFASTIGBT

Features ?Internationalstandardpackages ?HighfrequencyIGBT ?LatestgenerationHDMOSTMprocess ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersuppli

IXYS

IXYS Corporation

IXGN50N60B

HiPerFASTTMIGBT

Features ?InternationalstandardpackageSOT-227B ?Aluminiumnitrideisolation -highpowerdissipation ?Isolationvoltage3000V~ ?Veryhighcurrent,fastswitchingIGBT ?LowVCE(sat)forminimumon-stateconductionlosses ?MOSGateturn-ondrivesimplicity ?Lowcollector-to-cas

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IGB50N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS IGBT TECH 600V 50A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
TO-263
1612
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
INFINEON
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
INFINEON/英飛凌
24+
SOT-263
17659
原裝進口假一罰十
 詢價
英飛翎
17+
D2PAK(TO-263)
31518
原裝正品 可含稅交易
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINEON
24+
P-TO-263-3-2
8866
詢價
INFINEON
23+
P-TO-263-3-2
8600
全新原裝現(xiàn)貨
 詢價
INFINEON
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
INFINEON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
NEXPERIA/安世
23+
SOT669
69820
終端可以免費供樣,支持BOM配單!
 詢價
更多IGB50N60T供應(yīng)商 更新時間2025-5-21 9:33:00

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