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IXFR30N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFR30N60P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFT30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFT30N60Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurr

IXYS

IXYS Corporation

IXFT30N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFV30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFV30N60PS

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXGH30N60

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)

IXYS

IXYS Corporation

IXGH30N60A

LowVCE(sat)IGBT,HighspeedIGBT

Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)

IXYS

IXYS Corporation

IXGH30N60B

HiPerFASTTMIGBT

Features ?Internationalstandardpackages JEDECTO-268surface mountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOS?process ?MOSGateturn-on -drivesimplicity

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IGP30N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS IGBT TECH 600V 30A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
英飛翎
17+
TO-220
31518
原裝正品 可含稅交易
 詢價
INFINEON
24+
PG-TO-220-3-1
8866
詢價
INFINEON
23+
PG-TO-220-3-
8600
全新原裝現(xiàn)貨
 詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
INFINEON
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
Infineon
1844+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NEXPERIA/安世
23+
SOT-23
69820
終端可以免費供樣,支持BOM配單!
 詢價
INFINEON
23+
TO-220
6000
原裝正品，支持實單
 詢價
INFINEON
原廠封裝
1000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
INFINEON
23+
30A,600V,不帶D
20000
全新原裝假一賠十
 詢價
更多IGP30N60T供應(yīng)商 更新時間2025-5-23 10:02:00

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