首頁 >IGW30N60T>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IXFH30N60P

PolarHVTMHiPerFETPowerMOSFETN-ChannelEnhancementMode

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXFH30N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N60Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowQg Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancheenergyandcurr

IXYS

IXYS Corporation

IXFH30N60Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=30A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH30N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFP30N60X

AdvanceTechnicalInformation

IXYS

IXYS Corporation

IXFP30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ30N60X

PreliminaryTechnicalInformation

IXYS

IXYS Corporation

IXFQ30N60X

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    IGW30N60T

  • 功能描述：

    IGBT 晶體管 LOW LOSS IGBT TECH 600V 30A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
24+
TO-247
928
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINEON(英飛凌)
24+
TO247-3
6000
只做原裝/假一賠百
 詢價
INFINEON
100
原裝現(xiàn)貨,價格優(yōu)惠
 詢價
INFINEON
24+
PGTO-247-3-1
8866
詢價
INFINEON
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價
INFINEON
23+
PGTO-247-3-1
8600
全新原裝現(xiàn)貨
 詢價
Infineon
24+
NA
3201
進口原裝正品優(yōu)勢供應(yīng)
 詢價
更多IGW30N60T供應(yīng)商 更新時間2025-5-20 23:00:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多