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IRLHM620PBF

BatteryOperatedDCMotorInverterMOSFET

IRF

International Rectifier

IRLHM620TRPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRLI620

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=4.0A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-indu

IRF

International Rectifier

IRLI620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLI620G

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=4.0A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-indu

IRF

International Rectifier

IRLI620G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI620GPBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-indu

IRF

International Rectifier

IRLI620GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLS620A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.8Ω ID=4.1A FEATURES ●Logic-LevelGateDrive ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):0

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLS620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
N/A
64000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
詢價
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價
VBSEMI/微碧半導(dǎo)體
24+
TO263
60000
詢價
VBSEMI/微碧半導(dǎo)體
24+
TO263
7800
全新原廠原裝正品現(xiàn)貨,低價出售,實(shí)單可談
詢價
VBSEMI/臺灣微碧
23+
T0-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VBSEMI/臺灣微碧
23+
T0-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
ST
24+
TO-220
285
原裝現(xiàn)貨假一罰十
詢價
FAIRCHILD
23+
TRANS
65480
詢價
MOT
05+
原廠原裝
5781
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
更多IRF620STRR供應(yīng)商 更新時間2025-5-23 9:07:00