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IRFI630

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=5.9A)

200VN-ChannelMOSFET

IRF

International Rectifier

IRFI630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI630G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630G

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=5.9A)

200VN-ChannelMOSFET

IRF

International Rectifier

IRFI630G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS630

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF630NSTRL

  • 功能描述：

    MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2020+
TO-263
9600
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON/IR
1907+
NA
1600
20年老字號,原裝優(yōu)勢長期供貨
 詢價
Infineon Technologies
24+
D2PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
IR
16+
TO-263
6292
全新原裝/深圳現(xiàn)貨庫2
 詢價
INFINEON/英飛凌
24+
TO-263
18435
原裝進(jìn)口假一罰十
 詢價
INFINEON
25+
TO-263
8000
原裝正品!!!優(yōu)勢庫存!0755-83210901
 詢價
INFINEON/英飛凌
24+
TO-263
248
只做原廠渠道 可追溯貨源
 詢價
INFINEON/IR
18+
1600
TO-263-3 (D2PAK)
 詢價
INFINEON/英飛凌
2021+
TO-263
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
INFINEON/英飛凌
21+
TO-263
60000
絕對原裝正品現(xiàn)貨,假一罰十
 詢價
更多IRF630NSTRL供應(yīng)商 更新時間2025-5-21 15:51:00

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