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IRFS630

SEMICONDUCTORS

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IRFS630A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10?(Max.)@VDS=200V LowRDS(ON):0.333(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS630A

SEMICONDUCTORS

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IRFS630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFW630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRL630

PowerMOSFET(Vdss=200V,RdS(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRF630NSTRL

  • 功能描述：

    MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2020+
TO-263
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON/IR
1907+
NA
1600
20年老字號,原裝優(yōu)勢長期供貨
 詢價
Infineon Technologies
24+
D2PAK
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
IR
16+
TO-263
6292
全新原裝/深圳現(xiàn)貨庫2
 詢價
INFINEON/英飛凌
24+
TO-263
18435
原裝進口假一罰十
 詢價
INFINEON
25+
TO-263
8000
原裝正品!!!優(yōu)勢庫存!0755-83210901
 詢價
INFINEON/英飛凌
24+
TO-263
248
只做原廠渠道 可追溯貨源
 詢價
INFINEON/IR
18+
1600
TO-263-3 (D2PAK)
 詢價
INFINEON/英飛凌
2021+
TO-263
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
INFINEON/英飛凌
21+
TO-263
60000
絕對原裝正品現(xiàn)貨,假一罰十
 詢價
更多IRF630NSTRL供應(yīng)商 更新時間2025-5-22 14:08:00

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