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IRF640NL

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NL

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640NL

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640NL

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NL

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-262packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplic

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640NL

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NLPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NLPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF640H

  • 制造商：

    HARRIS

  • 功能描述：

    IRF640

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
TO-220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
TO-220
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
TO-220
7000
詢價(jià)
ST/意法
23+
TO220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
23+
TO-262
35890
詢價(jià)
IR
05+
原廠原裝
451
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
IR
24+
TO-262
8866
詢價(jià)
IR
23+
TO-220
5000
原裝正品,假一罰十
 詢價(jià)
IR
23+
TO-262
7600
全新原裝現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多IRF640H供應(yīng)商 更新時(shí)間2025-5-25 10:01:00

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