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NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTH4L040N120M3S_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVH4L040N120M3S

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(ons

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVH4L040N120M3S

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M3S,TO-247-4L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(tot)=75nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=80pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(ons

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ON
23+
TO-247-4
100000
全新原裝
 詢價(jià)
N/A
24+
N/A
29270
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同
 詢價(jià)
ON/安森美
22+
24000
原裝正品現(xiàn)貨,實(shí)單可談,量大價(jià)優(yōu)
 詢價(jià)
ONSEMI
22+
SMD
1350
詢價(jià)
onsemi
23+
TO-247-4L
1356
原廠正品現(xiàn)貨SiC MOSFET全系列
 詢價(jià)
ON
22+
NA
6150
原裝正品支持實(shí)單
 詢價(jià)
24+
N/A
70000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
ON
24+
N/A
5000
原裝原裝原裝
 詢價(jià)
ONN
2324+
705929
原裝正品,超低價(jià)出售
 詢價(jià)
onsemi
2025+
TO-247-4L
55740
詢價(jià)
更多NTH4L040N120M3S供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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