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NTH4L080N120SC1中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
NTH4L080N120SC1 |
功能描述 | Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L |
文件大小 |
411.64 Kbytes |
頁(yè)面數(shù)量 |
8 頁(yè) |
生產(chǎn)廠商 | ON Semiconductor |
企業(yè)簡(jiǎn)稱 |
ONSEMI【安森美半導(dǎo)體】 |
中文名稱 | 安森美半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-5-7 21:08:00 |
人工找貨 | NTH4L080N120SC1價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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NTH4L080N120SC1規(guī)格書詳情
Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
Features
? 1200 V @ TJ = 175°C
? Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A
? High Speed Switching with Low Capacitance
? 100 Avalanche Tested
? This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb?Free 2LI (on second level interconnection)
Applications
? Industrial Motor Drive
? UPS
? Boost Inverter
? PV Charger
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
TO247 |
30 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
ON |
TO247 |
30 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | |||
onsemi |
24+ |
TO-247-4L |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
ON(安森美) |
23+ |
TO-247-4 |
14548 |
公司只做原裝正品,假一賠十 |
詢價(jià) | ||
ON |
22+ |
NA |
650 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
ON |
21+ |
NA |
3000 |
進(jìn)口原裝 假一罰十 現(xiàn)貨 |
詢價(jià) | ||
ON2 |
23+ |
原廠原封 |
450 |
訂貨1周 原裝正品 |
詢價(jià) | ||
ON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
ON |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
ONSEMI |
23+ |
MOSFET |
5864 |
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低 |
詢價(jià) |