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NTH4L080N120SC1中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

NTH4L080N120SC1
廠商型號(hào)

NTH4L080N120SC1

功能描述

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

文件大小

411.64 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-7 21:08:00

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NTH4L080N120SC1規(guī)格書詳情

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

? 1200 V @ TJ = 175°C

? Max RDS(on) = 110 m at VGS = 20 V, ID = 20 A

? High Speed Switching with Low Capacitance

? 100 Avalanche Tested

? This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb?Free 2LI (on second level interconnection)

Applications

? Industrial Motor Drive

? UPS

? Boost Inverter

? PV Charger

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ON
23+
TO247
30
正規(guī)渠道,只有原裝!
詢價(jià)
ON
TO247
30
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
onsemi
24+
TO-247-4L
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
ON(安森美)
23+
TO-247-4
14548
公司只做原裝正品,假一賠十
詢價(jià)
ON
22+
NA
650
原裝正品支持實(shí)單
詢價(jià)
ON
21+
NA
3000
進(jìn)口原裝 假一罰十 現(xiàn)貨
詢價(jià)
ON2
23+
原廠原封
450
訂貨1周 原裝正品
詢價(jià)
ON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
ON
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
詢價(jià)
ONSEMI
23+
MOSFET
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
詢價(jià)